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Unisonic Technologies

8N80 Datasheet Preview

8N80 Datasheet

800V N-CHANNEL MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
8N80
8A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8N80 is an N-channel mode power MOSFET, it uses
UTC’s advanced technology to provide costumers planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance, superior switching performance. It also can withstand high
energy pulse in the avalanche and commutation mode.
The UTC 8N80 is generally applied in high efficiency switch mode
power supplies.
FEATURES
* Typically 35 nC Low Gate Charge
* RDS(ON) = 1.45@VGS = 10V
* Typically 13 pF Low CRSS
* Improved dv/dt Capability
* Fast Switching Speed
* 100% Avalanche Tested
* RoHS–Compliant Product
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N80L-TA3-T
8N80G-TA3-T
8N80L-TF3-T
8N80G-TF3-T
8N80L-TF1-T
8N80G-TF1-T
8N80L-TF2-T
8N80G-TF2-T
Note: Pin Assignment: G: GND, D: Drain, S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-471.I




Unisonic Technologies

8N80 Datasheet Preview

8N80 Datasheet

800V N-CHANNEL MOSFET

No Preview Available !

8N80
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 800 V
Gate-Source Voltage
VGSS ±30 V
Drain Current (Continuous) (TC=25°C)
ID
8A
Drain Current (Pulsed) (Note 1)
IDM 32 A
Avalanche Current (Note 1)
IAR 8 A
Single Pulse Avalanche Energy (Note 2)
EAS
850 mJ
Repetitive Avalanche Energy (Note 1)
EAR 17.8 mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5 V/ns
TO-220
178
Power Dissipation
TO-220F/TO-220F1
59 W
Linear Derating Factor above
TC=25°C
TO-220F2
TO-220
TO-220F/TO-220F1
TO-220F2
PD
62
1.43
0.47 W/°C
0.5
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 , Starting TJ = 25°C
3. ISD 8A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F/TO-220F1
TO-220F2
SYMBOL
θJA
θJC
RATINGS
62.5
0.7
2.1
2.0
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
2 of 7
QW-R502-471.I


Part Number 8N80
Description 800V N-CHANNEL MOSFET
Maker Unisonic Technologies
Total Page 7 Pages
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