6NM60-Q mosfet equivalent, n-channel power mosfet.
* RDS(on) < 1.08Ω @ VGS=10V, ID=3.0A * Improved dv/dt capability * Fast switching * 100% avalanche tested
* SYMBOL
Power MOSFET
* ORDERING INFORMATION
Note:
O.
* FEATURES
* RDS(on) < 1.08Ω @ VGS=10V, ID=3.0A * Improved dv/dt capability * Fast switching * 100% avalanche teste.
The UTC 6NM60-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used .
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