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Unisonic Technologies

5N50 Datasheet Preview

5N50 Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
5N50
Power MOSFET
5A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 5N50 is an N-channel power MOSFET adopting UTC’s
advanced technology to provide customers with DMOS, planar stripe
technology. This technology is designed to meet the requirements of
the minimum on-state resistance and perfect switching performance.
It also can withstand high energy pulse in the avalanche and
communication mode.
The UTC 5N50 can be used in applications, such as active power
factor correction, high efficiency switched mode power supplies,
electronic lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON) < 1.4@VGS = 10 V, ID =2.5 A
* 100% avalanche tested
* High switching speed
SYMBOL
1
TO-262
1
TO-220F
1
TO-220F1
1
TO-252
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
5N50L-TF3-T
5N50G-TF3-T
5N50L-TF1-T
5N50G-TF1-T
5N50L-TN3-R
5N50G-TN3-R
5N50L-T2Q-T
5N50G-T2Q-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
TO-220F1
TO-252
TO-262
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tape Reel
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MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-476.H




Unisonic Technologies

5N50 Datasheet Preview

5N50 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

5N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
500
±30
V
V
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
5
20
A
A
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
EAS
EAR
dv/dt
5A
300 mJ
7.3 mJ
4.5 V/ns
TO-262
125 W
Power Dissipation
TO-220F/TO-220F1
PD
38 W
TO-252
54 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 21.5mH, IAS = 5A, VDD = 50V, RG = 25, Starting TJ = 25°C
4. ISD 5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-262/TO-220F
Junction to Ambient
TO-220F1
TO-252
TO-262
Junction to Case
TO-220F/TO-220F1
TO-251
SYMBOL
θJA
θJC
RATINGS
62.5
110
1
3.25
2.13
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-476.H


Part Number 5N50
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
Total Page 6 Pages
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