* RDS(ON) ≤ 1.3Ω @ VGS=10V, ID=2.0A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness
* SYMBOL Power MOSFET www.uni.

* FEATURES * RDS(ON) ≤ 1.3Ω @ VGS=10V, ID=2.0A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/.

The UTC 4NM50 is a high voltage super junction MOSFET and is designed to have better characteristics. The UTC 4NM50 Utilizing an advanced charge-balance technology, enhance system efficiency, improve EMI and reliability. such as low gate charge, low .

4NM120

4NM60-U2

4NM65

4NM65-U2

4N03L02

4N041R1

4N04R7

4N04R8

4N0607

4N10

4N100

4N100-FC

4N100-FCQ

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts