* RDS(ON) = 3.1Ω @ VGS=10V, ID=2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
* SYMBOL Power MOSFET
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including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* FEATURES * R.

The UTC 4N65Z-E is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high s.

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