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Unisonic Technologies

25N10 Datasheet Preview

25N10 Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
25N10
Preliminary
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
„ DESCRIPTION
The UTC 25N10 is an N-channel enhancement mode power
MOSFET and it uses UTC’s perfect technology to provide designers
with fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
It is generally suitable for all commercial-industrial applications
and DC/DC converters requiring low voltage.
„ FEATURES
* Single Drive Requirement
* Low Gate Charge
* RoHS Compliant
„ SYMBOL
Power MOSFET
„ ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
25N10L-TN3-R
25N10G-TN3-R
Package
TO-252
Pin Assignment
12
3
GD
S
Packing
Tape Reel
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-448.a




Unisonic Technologies

25N10 Datasheet Preview

25N10 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

25N10
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Source Voltage
VDSS
100
V
Gate Source Voltage
Continuous Drain Current (VGS=10V)
Pulsed Drain Current (Note 2)
Total Power Dissipation (TC =25°C)
Operating Junction Temperature
TC =25°C
TC = 100°C
VGSS
ID
ID
IDM
PD
TJ
±20
23
14.6
80
41
-55 ~ +150
V
A
A
A
W
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by max. junction temperature
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
100
3
„ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS VGS =0V, ID =1mA
ΔBVDSS/ΔTJ Reference to 25°C , ID =1mA
100
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
VDS =100V, VGS =0V, TJ=25°C
VDS =80V, VGS =0V,TJ =150°C
IGSS VGS =±20V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note)
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS =VGS, ID =250µA
VGS =10V, ID =16A
VDS =10V, ID =16A
2
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
CISS
COSS
CRSS
RG
VDS =25V, VGS=0V, f=1.0MHz
f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note)
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time1
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=80V, ID=16A
VDD=50V, ID=16A, RG=3.3,
VGS=10V, RD=3.125
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
www.DatDarSahine-eSt4oUur.ccoemDiode Forward Voltage (Note)
Reverse Recovery Time
Reverse Recovery Charge
VSD IS =16A, VGS =0V
tRR IS
=16A,VGS
QRR dI/dt=100A/µs
Note: Pulse Test : Pulse width 300μs, Duty cycle 2%
=0V,
TYP
0.14
14
1060
270
8
1.5
19
5
6
10
28
17
2
90
380
MAX UNIT
V
V/°C
25
100
±100
µA
µA
nA
4V
80 m
S
1700
2.3
pF
pF
pF
30 nC
nC
nC
ns
ns
ns
ns
1.3 V
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-448.a


Part Number 25N10
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
Total Page 3 Pages
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