* RDS(ON) <15.5Ω@ VGS = 10V, ID = 0.5A * Ultra Low gate charge (typical 8.0nC) * Low reverse transfer capacitance (CRSS = 3.0 pF(max)) * Fast switching capability * Avala.

at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* FEATURES * RDS(ON) .

The UTC 1N65A is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed swi.

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