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Unisonic Technologies

18N60 Datasheet Preview

18N60 Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
18N60
600V N-CHANNEL POWER
MOSFET
Power MOSFET
„ DESCRIPTION
The UTC 18N60 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
„ FEATURES
* RDS(ON) 400m@VGS = 10 V
* Ultra Low Gate Charge ( Typical 50nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 23pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
„ SYMBOL
2.Drain
1
TO-247
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
18N60L-T47-T
18N60G-T47-T
Package
TO-247
Pin Assignment
123
GDS
Packing
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-221.D




Unisonic Technologies

18N60 Datasheet Preview

18N60 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

18N60
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600 V
Gate-Source Voltage
Continuous Drain Current
VGSS
ID
±30 V
18 A
Pulsed Drain Current
Avalanche Current
IDM 45 A
IAR 18 A
Avalanche Energy
Single Pulsed
Repetitive
EAS
EAR
1000
30
mJ
Peak Diode Recovery dv/dt
dv/dt
10 V/ns
Power Dissipation
PD 360 W
Junction Temperature
TJ 150 °С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction to Case
SYMBOL
θJC
RATINGS
0.35
„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
°С/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=VDSS, VGS=0V
VDS=0V, VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=9A (Note)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VGS=10V, VDS=0.5VDSS,
ID=18A, RG=5(External)
VGS=10V, VDS=0.5VDSS,
ID=9A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD IF=IS ,VGS=0V (Note )
Maximum Continuous Drain-Source
Diode Forward Current
IS VGS=0V
Maximum Pulsed Drain-Source Diode
www.DatFaoSrhweaertd4UC.ucorrment
ISM Repetitive
Reverse Recovery Time
tRR VGS=0V, dIF/dt=100A/µs,
Reverse Recovery Charge
QRR IS=18A, VR=100V
Note: Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
MIN TYP MAX UNIT
600 V
25 µA
±100 nA
3.0 5.0 V
400 m
2500
280
23
pF
pF
pF
21 ns
22 ns
62 ns
22 ns
50 nC
15 nC
18 nC
1.5 V
18 A
54 A
200 ns
0.8 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-221.D


Part Number 18N60
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
Total Page 3 Pages
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