18N60 mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 0.5 Ω @ VGS=10V, ID=9.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
* SYMBOL
2.Drain
1 TO-24.
* FEATURES
* RDS(ON) ≤ 0.5 Ω @ VGS=10V, ID=9.0A * Fast Switching Capability * Avalanche Energy Specified * Improve.
The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES.
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