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18N60 - N-Channel Power MOSFET

General Description

The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • RDS(ON) ≤ 0.5 Ω @ VGS=10V, ID=9.0A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL 2.Drain 1 TO-247 11 TO-3P TO-3PN 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 18N60 18A, 600V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 0.5 Ω @ VGS=10V, ID=9.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 2.Drain 1 TO-247 11 TO-3P TO-3PN 1.Gate 3.