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Unisonic Technologies

15N60 Datasheet Preview

15N60 Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
15N60
15A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 15N60 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers with planar stripe
and DMOS technology. This technology is specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 15N60 is universally applied in active power factor
correction and high efficient switched mode power supplies.
FEATURES
* RDS(ON) < 0.65@ VGS=10V, ID=7.5A
* High switching speed
* Improved dv/dt capability
SYMBOL
Power MOSFET
RDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
15N60L-TF1-T
15N60G-TF1-T
15N60L-TF1-T
15N60G-TF1-T
15N60L-TF2-T
15N60G-TF2-T
15N60L-T47-T
15N60G-T47-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-247
Pin Assignment
123
GD S
GD S
GD S
GD S
Packing
Tube
Tube
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-485.H




Unisonic Technologies

15N60 Datasheet Preview

15N60 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

15N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS 600 V
Gate to Source Voltage
VGSS ±30 V
Continuous Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
15 A
60 A
Avalanche Current (Note 2)
IAR 6.4 A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
205 mJ
2.45 V/ns
TO-220
250 W
Power Dissipation
TO-220F1
TO-220F2
PD
54 W
52 W
TO-247
312 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=10mH, IAS=6.4A, VDD= 50V, RG=25, Starting TJ=25°C
4. ISD 15A, di/dt 200A/μs, VDD BVDSS, Starting TJ=25°C
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
TO-220/TO-220F1
Junction to Ambient
TO-220F2
TO-247
TO-220
Junction to Case
TO-220F1
TO-220F2
TO-247
SYMBOL
θJA
θJC
RATINGS
62.5
40
0.5
2.3
2.4
0.4
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-485.H


Part Number 15N60
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
Total Page 6 Pages
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