13005EC transistor equivalent, npn silicon transistor.
* VCES = 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С
tC @ 3A, 100°С is 180 ns (Typ) * 850V blocking .
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* APPLICATIONS
* Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflecti.
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.
* FEATURES
* VCES = 850 V * Reverse bias SOA with inductive load.
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