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12NN10 - Dual N-Channel MOSFET

General Description

The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • S.
  • Low Gate Charge (Typically 14.2nC).
  • RDS(ON) < 0.18Ω @ VGS=10V, ID=2.0A.
  • Fast Switching Speed.
  • Simple Drive Requirement.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 12NN10 2.5A, 100V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.  FEATURES * Low Gate Charge (Typically 14.2nC) * RDS(ON) < 0.18Ω @ VGS=10V, ID=2.