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12NN10 Datasheet, Unisonic Technologies

12NN10 mosfet equivalent, dual n-channel mosfet.

12NN10 Avg. rating / M : 1.0 rating-12

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12NN10 Datasheet

Features and benefits

* Low Gate Charge (Typically 14.2nC) * RDS(ON) < 0.18Ω @ VGS=10V, ID=2.0A * Fast Switching Speed * Simple Drive Requirement
* SYMBOL Power MOSFET
* ORDERING INF.

Description

The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.
* FEATURES * Low Gate Charge (Typically 14.2nC) * RDS(ON) < 0.18.

Image gallery

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TAGS

12NN10
Dual
N-Channel
MOSFET
Unisonic Technologies

Manufacturer


Unisonic Technologies

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