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10NN15 - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The UTC 10NN15 is a Dual N-channel enhancement mode power MOSFET using UTC’s perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • High switching speed.
  • Low Gate Charge.
  • Simple Drive Requirement.
  • SYMBOL Power MOSFET SOP-8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 10NN15 DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 10NN15 is a Dual N-channel enhancement mode power MOSFET using UTC’s perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  FEATURES * High switching speed * Low Gate Charge * Simple Drive Requirement  SYMBOL Power MOSFET SOP-8  ORDERING INFORMATION Ordering Number 10NN15G-S08-R Note: Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source Pin Assignment 1 2 3 4 5, 6 7, 8 S1 G1 S2 G2 D2 D1 Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-565.