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Unisonic Technologies

10N80 Datasheet Preview

10N80 Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
10N80
800V N-CHANNEL POWER
MOSFET
„ DESCRIPTION
The UTC 10N80 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
„ FEATURES
* RDS(ON) = 1.1@VGS = 10 V
* Ultra Low Gate Charge ( Typical 45 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 15 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
„ SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N80L-T3P-T
10N80G-T3P-T
10N80L-TF1-T
10N80G-TF1-T
Package
TO-3P
TO-220F1
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-218.D




Unisonic Technologies

10N80 Datasheet Preview

10N80 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

10N80
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800 V
Gate-Source Voltage
Continuous Drain Current (TC = 25°С)
VGSS
ID
±30 V
10 A
Pulsed Drain Current (Note 2)
IDM 40 A
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
IAR
EAS
EAR
10 A
920 mJ
24 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0 V/ns
Power Dissipation
TO-3P
TO-220F1
Linear
Derating
Factor
above
TC
=
25°С
TO-3P
TO-220F1
PD
240
36
1.92
0.288
W
°С/W
Junction Temperature
TJ 150 °С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=17.3mH, IAS=10A, VDD=50V, RG=25, Satarting TJ=25°C
4. ISD 10 A, di/dt 200A/μs, VDD BVDSS, Satarting TJ=25°C.
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-3P
TO-220F1
TO-3P
TO-220F1
SYMBOL
θJA
θJC
RATINGS
40
62.5
0.52
3.47
UNIT
°С/W
°С/W
„ ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
Breakdown Voltage Temperature
Coefficient
BVDSS
IDSS
IGSS
ΔBVDSS/ΔTJ
VGS =0 V, ID =250 µA
VDS =800V, VGS =0 V
VDS =640V, TC =125°C
VDS =0 V, VGS = ±30 V
ID =250 µA, Referenced to 25°C
800
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(TH)
RDS(ON)
VDS =VGS, ID =250 µA
VGS = 10 V, ID = 5.0 A
3.0
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =25V, VGS =0V, f=1MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
www.DatTauSrhne-OetF4UF .Dcoemlay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=400V, ID=10.0A,
RG=25(Note 1,2)
VDS =640V, VGS =10V,
ID =10.0A (Note 1,2)
TYP
0.98
0.93
2150
180
15
50
130
90
80
45
13.5
17
MAX UNIT
10
100
±100
V
µA
nA
mV/°С
5.0 V
1.1
2800
230
20
pF
pF
pF
110
270
190
ns
170
58
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-218.D


Part Number 10N80
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
Total Page 6 Pages
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