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Unisonic Technologies

10N50 Datasheet Preview

10N50 Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
10N50
Preliminary
10 Amps, 500 Volts
N-CHANNEL POWER MOSFET
„ DESCRIPTION
The UTC 10N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 10N50 is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
1
1
Power MOSFET
TO-220
TO-220F1
„ FEATURES
* 10A, 500V, RDS(ON)=0.61@ VGS=10V
* High Switching Speed
* 100% Avalanche Tested
„ SYMBOL
2.Drain
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N50L-TA3-T
10N50G-TA3-T
10N50L-TF1-T
10N50G-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-531.a




Unisonic Technologies

10N50 Datasheet Preview

10N50 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

10N50
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500 V
Gate-Source Voltage
Drain Current
Continuous (TC=25°C)
Pulsed (Note 3)
Avalanche Current (Note 3)
Avalanche Energy
Single Pulsed (Note 4)
Repetitive (Note 5)
Peak Diode Recovery dv/dt (Note 5)
VGSS
ID
IDM
IAR
EAS
EAR
dv/dt
±30
10 (Note2)
40 (Note 2)
10
388
14.3
4.5
V
A
A
A
mJ
mJ
V/ns
Power Dissipation
TC=25°C
Derate above 25°C
TO-220
TO-220F1
TO-220
TO-220F1
PD
143
48
W
1.14
0.38
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 7mH, IAS = 10A, VDD = 50V, RG = 25, Starting TJ = 25°C
5. ISD 10A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F1
TO-220
TO-220F1
SYMBOL
θJA
θJC
RATINGS
62.5
62.5
0.87
2.58
UNIT
°C/W
°C/W
www.DataSheet4U.com
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-531.a


Part Number 10N50
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
Total Page 6 Pages
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