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UTT60N10M - N-CHANNEL POWER MOSFET

Description

The UTC UTT60N10M is N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with high switching speed, a extremely low RDS(ON) and low gate charge.

Features

  • RDS(ON) ≤ 18 mΩ @ VGS=10V, ID=30A RDS(ON) ≤ 25 mΩ @ VGS=4.5V, ID=15A.
  • Green Device Available.
  • Low Gate Charge.
  • Surface mount package.
  • SYMBOL 1 1 TO-251 TO-247 1 TO-252 1 SOP-8 PDFN5×6 www. unisonic. com. tw Copyright © 2021 Unisonic Technologies Co. , Ltd 1 of 9 QW-R209-132.K UTT60N10M POWER MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTT60N10M POWER MOSFET 60A, 100V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET 1 1 TO-220 TO-220F  DESCRIPTION The UTC UTT60N10M is N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with high switching speed, a extremely low RDS(ON) and low gate charge. The UTC UTT60N10M is suitable for high frequency Point -of-Load Synchronous, Networking DC-DC System, CCFL Back-light Inverter, etc.  FEATURES * RDS(ON) ≤ 18 mΩ @ VGS=10V, ID=30A RDS(ON) ≤ 25 mΩ @ VGS=4.5V, ID=15A * Green Device Available * Low Gate Charge * Surface mount package  SYMBOL 1 1 TO-251 TO-247 1 TO-252 1 SOP-8 PDFN5×6 www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 9 QW-R209-132.