UTT50N06M mosfet equivalent, n-channel mosfet.
* RDS(ON) ≤ 12 mΩ @ VGS=10V, ID=25A RDS(ON) ≤ 15 mΩ @ VGS=4.5V, ID=20A
* High Cell Density Trench Technology * High Power and Current Handling Capability
* SYMBOL
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The UTC UTT50N06M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.
The UTC UTT50N06M is suitable for high efficiency synchronous rectificat.
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