UTT3N10-H mosfet equivalent, n-channel mosfet.
* RDS(on) < 225mΩ @ VGS = 10V, ID = 1.25A RDS(on) < 360mΩ @ VGS = 4.5V, ID = 125A * High switching speed * Low grage * SYMBOL Power MOSFET * ORDERING INFORMATIO.
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