UTT3N10-H mosfet equivalent, n-channel mosfet.
* RDS(on) < 225mΩ @ VGS = 10V, ID = 1.25A RDS(on) < 360mΩ @ VGS = 4.5V, ID = 125A
* High switching speed * Low grage
* SYMBOL
Power MOSFET
* ORDERING INFORMATIO.
The UTC UTT3N10-H is an N-channel logic level enhancement mode field effect transistor, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge.
* FEATURES
* RDS(on) < 225mΩ @ VGS = 10V, ID = 1.25A.
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