UTT2N10-H
Description
The UTC UTT2N10-H is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge.
Key Features
- * RDS(ON) ≤ 220 mΩ @ VGS=10V, ID=1.6A RDS(ON) ≤ 235 mΩ @ VGS=4.5V, ID=1.3A * High switching speed * Low gate charge
