UTT15N10 mosfet equivalent, 100v n-channel mosfet.
* RDS(ON) ≤ 125 mΩ @ VGS=10V, ID=7.5A RDS(ON) ≤ 150 mΩ @ VGS=4.5V, ID=7.5A
* Low on-state resistance * Built-in gate protection diode * High Switching Speed * High Power .
* FEATURES
* RDS(ON) ≤ 125 mΩ @ VGS=10V, ID=7.5A RDS(ON) ≤ 150 mΩ @ VGS=4.5V, ID=7.5A
* Low on-state resistance * B.
The UTC UTT15N10 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as high current switching applications.
* FEATURE.
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