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UTG7N65-S 650V TRENCH GATE FIELD-STOP IGBT

UTG7N65-S Description

UNISONIC TECHNOLOGIES CO., LTD UTG7N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT * .
The UTC UTG7N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.

UTG7N65-S Features

* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(SAT). Typ. =1.5V @ IC=7.0A, VGE=15V (TC =25°C)
* SYMBOL
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG7N65L-TN3-R UTG7N65G-TN3-R TO-252 Note: Pin Assignment: G: Gate

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Datasheet Details

Part number
UTG7N65-S
Manufacturer
UTC
File Size
198.99 KB
Datasheet
UTG7N65-S-UTC.pdf
Description
650V TRENCH GATE FIELD-STOP IGBT

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650V TRENCH GATE FIELD-STOP IGBT UTC
UTC UTG7N65-S-like datasheet