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UT8PP06M - P-CHANNEL POWER MOSFET

General Description

The UTC UT8PP06M is a P-channel MOS Field Effect Transistor.

it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

The UTC UT8PP06M is suitable for high voltage switching applications.

Key Features

  • RDS(ON) ≤ 110 mΩ @ VGS=-10V, ID=-2.0A.
  • RDS(ON) ≤ 145 mΩ @ VGS=-4.5V, ID=-1.0A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET SOP-8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT8PP06M Advance P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT8PP06M is a P-channel MOS Field Effect Transistor. it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UT8PP06M is suitable for high voltage switching applications.  FEATURES * RDS(ON) ≤ 110 mΩ @ VGS=-10V, ID=-2.0A * RDS(ON) ≤ 145 mΩ @ VGS=-4.5V, ID=-1.