UT70N03 mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 7.2 mΩ @ VGS=10V, ID=33A * RDS(ON) ≤ 9.5 mΩ @ VGS=4.5V, ID=20A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified
* FEATURES
* RDS(ON) ≤ 7.2 mΩ @ VGS=10V, ID=33A * RDS(ON) ≤ 9.5 mΩ @ VGS=4.5V, ID=20A * Low capacitance * Low gate .
The UT70N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES
* RDS(ON) ≤ 7.2 mΩ @ VGS=10V, ID=3.
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