Datasheet4U Logo Datasheet4U.com

UT3434 - N-CHANNEL POWER MOSFET

Description

MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge.

This device can be operated with 4.5V low gate voltage.

Features

  • RDS(ON) ≤ 300 mΩ @ VGS=4.5V, ID=600mA RDS(ON) ≤ 450 mΩ@ VGS=2.5V, ID=200mA RDS(ON) ≤ 600 mΩ@ VGS=1.8V, ID=100mA RDS(ON) ≤ 850 mΩ@ VGS=1.5V, ID=50mA.
  • SYMBOL Power MOSFET.

📥 Download Datasheet

Datasheet preview – UT3434

📁 Similar Datasheet

  • UT3406G-AE3 - N-Channel 30V MOSFET (VBsemi)
  • UT3413 - Power MOSFET (Unisonic Technologies)
  • UT3414 - Power MOSFET (Unisonic Technologies)
  • UT3416 - N-CHANNEL MOSFET (Unisonic Technologies)
  • UT3419 - Power MOSFET (Unisonic Technologies)
  • UT3443 - Power MOSFET (Unisonic Technologies)
  • UT3458 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • UT347 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
  • UT347 - RECTIFIERS (Microsemi Corporation)
  • UT3005 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
Other Datasheets by UTC

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD UT3434 750mA, 20V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT3434 is N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. This device can be operated with 4.5V low gate voltage.  FEATURES * RDS(ON) ≤ 300 mΩ @ VGS=4.5V, ID=600mA RDS(ON) ≤ 450 mΩ@ VGS=2.5V, ID=200mA RDS(ON) ≤ 600 mΩ@ VGS=1.8V, ID=100mA RDS(ON) ≤ 850 mΩ@ VGS=1.
Published: |