Datasheet4U Logo Datasheet4U.com

UT12N10 - N-CHANNEL POWER MOSFET

General Description

The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design.

Moreover, it‘ s good at handing high power and current.

Key Features

  • r>.
  • RDS(ON) < 180mΩ @ VGS=10V, ID=6A.
  • Be good at handing high power and current.
  • Very high dense cell design for super low RDS(ON).
  • Lead free product is acquired.
  • SYMBOL 1 1 Power MOSFET 1 SOT-223 TO-252 TO-251.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UT12002 10/100 BASE T SINGLE PORT SURFACE MOUNT MAGNETICS UNIVERSAL MICROELECTRONICS
UT12005 10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS UNIVERSAL MICROELECTRONICS
UT1201-7 500 Watt AC-DC Converters Power-One
UT12118 FAST ETHERNET 10BASE-T/100BASE-TX TRANSRORMER ETC
UT1240-7Z 500 Watt AC-DC Converters Power-One

Other Datasheets by Unisonic Technologies

Part Number Description
UT12NP10 DUAL-CHANNEL POWER MOSFET
UT120N03 N-CHANNEL POWER MOSFET
UT120N08 N-CHANNEL POWER MOSFET
UT12P10 P-CHANNEL POWER MOSFET
UT100N03-Q N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD UT12N10 Preliminary 12 Amps, 100 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover, it‘ s good at handing high power and current.  FEATURES * RDS(ON) < 180mΩ @ VGS=10V, ID=6A * Be good at handing high power and current. * Very high dense cell design for super low RDS(ON). * Lead free product is acquired.