UT120N03
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
30 V
±20 V
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
120 A
480 A
Single Pulsed Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
240 mJ
6.0 V/ns
Power Dissipation (TC=25°C)
Junction Temperature
PD 125 W
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 0.61mH, IAS = 28A, VDD = 27V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 80A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
5. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 100A.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
1
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-581.a
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