UT100N03-Q datasheet, mosfet equivalent, UTC

Features and benefits

* RDS(ON) ≤ 5.3 mΩ @ VGS=10V, ID=50A * RDS(ON) ≤ 8.0 mΩ @ VGS=4.5V, ID=40A 1 TO-220 1 1 TO-263 PDFN5×6
* SYMBOL
* ORDERING INFORMATION Ordering Number Le.

Application

* FEATURES * RDS(ON) ≤ 5.3 mΩ @ VGS=10V, ID=50A * RDS(ON) ≤ 8.0 mΩ @ VGS=4.5V, ID=40A 1 TO-220 1 1 TO-263 PDFN.

Description

The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES * RDS(ON) ≤ 5.3 mΩ @ VGS=10V, I.

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