UT100N03-Q mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 5.3 mΩ @ VGS=10V, ID=50A * RDS(ON) ≤ 8.0 mΩ @ VGS=4.5V, ID=40A
1
TO-220
1 1
TO-263
PDFN5×6
* SYMBOL
* ORDERING INFORMATION
Ordering Number
Le.
* FEATURES
* RDS(ON) ≤ 5.3 mΩ @ VGS=10V, ID=50A * RDS(ON) ≤ 8.0 mΩ @ VGS=4.5V, ID=40A
1
TO-220
1 1
TO-263
PDFN.
The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES
* RDS(ON) ≤ 5.3 mΩ @ VGS=10V, I.
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