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USSP0140 - 1.0A PNP TRANSISTOR

General Description

The UTC USSP0140 is an PNP low VCE(SAT) Breakthrough.

Key Features

  • S.
  • Low collector-emitter saturation voltage VCE(SAT).
  • High collector current capability: IC and ICM.
  • Higher efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements.
  • Complement: USSN0140.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD USSP0140 Preliminary PNP EPITAXIAL SILICON TRANSISTOR 40V, 1.0A PNP LOW VCE(SAT) TRANSISTOR  DESCRIPTION The UTC USSP0140 is an PNP low VCE(SAT) Breakthrough.  FEATURES * Low collector-emitter saturation voltage VCE(SAT) * High collector current capability: IC and ICM * Higher efficiency leading to less heat generation * Reduced printed-circuit board requirements * Complement: USSN0140  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package USSP0140L-AA3-R USSP0140G-AA3-R SOT-223 USSP0140L-AE3-R USSP0140G-AE3-R SOT-23 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E B E C Packing Tape Reel Tape Reel  MARKING SOT-223 SOT-23 www.unisonic.com.