UP2003 - P-Channel Power MOSFET

Unisonic Technologies

Description

The UP2003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

S.
RDS(ON).

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UP2003 p-channel power mosfet by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	UP2003
Manufacturer	Unisonic Technologies
File Size	243.70 KB
Description	P-Channel Power MOSFET
Datasheet	UP2003 Datasheet

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UP2003 9A, 25V P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Power MOSFET  DESCRIPTION The UP2003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON)<35 mΩ @ VGS =-4.5 V, ID =-7 A * RDS(ON)<20 mΩ @ VGS =-10 V, ID =-9 A  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP2003L-TN3-R UP2003G-TN3-R Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-202.