* RDS(ON) ≤ 8.2 mΩ @ VGS=4.5V, ID=8.0A RDS(ON) ≤ 9.5 mΩ @ VGS=2.5V, ID=7.0A RDS(ON) ≤ 12 mΩ @ VGS=1.8V, ID=4.0A * High Cell Density Trench Technology * High Power and Cur.

The UTC UND02R100L is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology. The UTC UND02R100L is suitable for high efficiency synchronous rectifica.

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