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UM6K31N Datasheet Preview

UM6K31N Datasheet

SILICON N-CHANNEL MOSFET TRANSISTOR

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UNISONIC TECHNOLOGIES CO., LTD
UM6K31N
SILICON N-CHANNEL MOSFET
TRANSISTOR
DESCRIPTION
The UTC UM6K31N is a silicon N-channel MOS Field Effect
Transistor. It can be used in switching applications.
SYMBOL
65
4
Power MOSFET
12
3
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UM6K31NL-AL6-R
UM6K31NG-AL6-R
SOT-363
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123456
Packing
S1 G1 D2 S2 G2 D1 Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-503.B




UTC

UM6K31N Datasheet Preview

UM6K31N Datasheet

SILICON N-CHANNEL MOSFET TRANSISTOR

No Preview Available !

UM6K31N
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, it is the same rating for the Tr1 AND Tr2)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
60
±20
V
V
Drain Current Continuous
Continuous
Pulsed (Note1)
ID
IDP
±250
±1
mA
A
Source Current
Continuous (Body Diode)
Continuous
Pulsed (Note1)
IS
ISP
125 mA
1A
Power Dissipation
Channel Temperature
PD 150 mW
TCH 150 °C
Strage Temperature
TSTG
-55~150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Channel to Ambient
SYMBOL
θJA
RATINGS
833
ELECTRICAL CHARACTERISTICS (Ta =25°C, it is the same rating for the Tr1 And Tr2)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
BVDSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS = ±20 V, VDS=0 V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State
Resistance (Note1)
VGS(TH)
RDS(ON)
VDS=10V, ID=1mA
VGS=10V, ID=250mA
VGS=4.5V, ID=250mA
VGS=4.0V, ID=250mA
VGS=2.5V, ID=10mA
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1MHz
SWITCHING PARAMETERS (Note1)
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=48V, VGS=10V, ID=250mA
IG= 1mA (Note1, 2)
VDS=30V, VGS=10V, ID=250mA,
RG=25
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (Note1)
Drain-Source Diode Forward Voltage
VSD IS=250mA, VGS=0V
Note: PW 10μs DUTY CYCLE1%.
MIN TYP MAX UNIT
60 V
1 µA
±10 µA
1.0 2.5
1.7 2.4
2.1 3.0
3.3 4.0
9.4 12
V
26 pF
12 pF
5 pF
6.6 nC
2.48 nC
0.92 nC
6 ns
9 ns
14 ns
12 ns
1.2 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-503.B


Part Number UM6K31N
Description SILICON N-CHANNEL MOSFET TRANSISTOR
Maker UTC
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UM6K31N Datasheet PDF






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