UK3919 mosfet equivalent, switching n-channel power mosfet.
* RDS(ON) = 5.6mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified
* SYMBOL
2.Drain
*Pb-free plating pr.
* FEATURES
* RDS(ON) = 5.6mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Av.
This UK3919 N-Channel Logic Level MOSFET is produced using UTC Semiconductor advanced Power Trench process which has been tailored to make the on-state resistance minimum and yet maintain low gate charge for superior switching performance especially..
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