UF634-Q datasheet, mosfet equivalent, UTC

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Features and benefits

* RDS(ON) ≤ 0.55 Ω @ VGS=10V, ID=4.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
* SYMBOL 2.Drain 1 1 TO.

Application

The UF634-Q suitable for resonant and PWM converter topologies.
* FEATURES * RDS(ON) ≤ 0.55 Ω @ VGS=10V, ID=4.0A * .

Description

These kinds of N-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF634-Q su.

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