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UD4614 - Dual-Channel MOSFET

General Description

The UTC UD4614 can provide excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs.

The UTC UD4614 may be used in H-bridge, inverters and other applications.

Key Features

  • S.
  • N-Channel: 40V/6A RDS(ON) ≤ 23.2 mΩ (typ. ) @ VGS =10V RDS(ON) ≤ 32.6 mΩ (typ. ) @ VGS= 4.5V.
  • P-Channel: -40V/-5A RDS(ON) ≤ 34.7 mΩ (typ. ) @ VGS= -10V RDS(ON) ≤ 50.6 mΩ (typ. ) @ VGS= -4.5V.
  • Super high dense cell design.
  • Reliable and Rugged.
  • SYMBOL (7)(8) D1 (5)(6) D2 (3) D1 / D2 (4) (2) G2 G1 (5) (2) G2 G1 1 TO-252-4 SOP-8 S1 (1) N-Channel S2 (3) P-Channel S1 (1) N-Channel S2 (4) P-Channel SOP-8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UD4614 DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) Power MOSFET  DESCRIPTION The UTC UD4614 can provide excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The UTC UD4614 may be used in H-bridge, inverters and other applications.  FEATURES * N-Channel: 40V/6A RDS(ON) ≤ 23.2 mΩ (typ.) @ VGS =10V RDS(ON) ≤ 32.6 mΩ (typ.) @ VGS= 4.5V * P-Channel: -40V/-5A RDS(ON) ≤ 34.7 mΩ (typ.) @ VGS= -10V RDS(ON) ≤ 50.6 mΩ (typ.) @ VGS= -4.