F9N100-FC mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=4.5A * Fast body diode MOSFET technology * Low switching losses due to reduced Qrr * Fast Switching Speeds * 100% avalanche tested * Linea.
such. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
<.
The UTC F9N100-FC N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode. is designed high voltage, high speed power switching applications such. such as fast switching time, low gate charge, low on-state resistance and high rugged.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 199.68KB)