F3N70-LC Datasheet, UTC

* RDS(ON) ≤ 4.6 Ω @ VGS=10V, ID=1.5A * Fast body diode MOSFET technology * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggednes.

such, is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance .

The UTC F3N70-LC is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching applications such, is designed to have better characteristics, such as fast switching time, low gate.