F17NP055 datasheet, mosfet equivalent, UTC

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Features and benefits

* N-CHANNEL: 55V/17A RDS(on) ≤ 44 mΩ @ VGS=10V, ID=8.5A * P-CHANNEL: -55V/-17A RDS(on) ≤ 134 mΩ @ VGS=-10V, ID=-8.5A * Fast body diode MOSFET technology * High switching .

Application

such, is designed to have better characteristics. such as fast switching time, low gate charge, low on-state resistance .

Description

The UTC F17NP055 incorporates a N-channel MOSFET and a P-channel MOSFET enhancement mode silicon gate power MOSFET with Fast Body Diode. is designed high voltage, high speed power switching applications such, is designed to have better characteristic.

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