8NM80-Q mosfet equivalent, 800v n-channel power mosfet.
* RDS(ON) ≤ 0.75 Ω @ VGS=10V, ID=4.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL
Power MOSFET
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* FEATURES
* RDS(ON) ≤ 0.75 Ω @ VGS=10V, ID=4.0A * Fast switching capability * Avalanche energy tested * Improved d.
The UTC 8NM80-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used .
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