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5NM80 - N-CHANNEL MOSFET

General Description

is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

This power MOSFET is usually used at AC-DC converters for power applications.

Key Features

  • S.
  • RDS(ON) ≤ 1.62 Ω @ VGS=10V, ID=2.5A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness 1 TO-251S 1 TO-252.
  • SYMBOL 2.Drain 1.Gate 3.Source.

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More Datasheets from Unisonic Technologies

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 5NM80 Power MOSFET 5A, 800V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 5NM80 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications. 1 TO-220 1 TO-220F1 1 1 TO-220F2 TO-251  FEATURES * RDS(ON) ≤ 1.62 Ω @ VGS=10V, ID=2.5A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness 1 TO-251S 1 TO-252  SYMBOL 2.Drain 1.Gate 3.