Datasheet4U Logo Datasheet4U.com

5N120 - N-CHANNEL MOSFET

General Description

The UTC 5N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S0.
  • RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
5N10029 Automotive MOSFET Infineon
5N105K5 N-channel Power MOSFET STMicroelectronics
5N150UF SGF5N150UF Fairchild Semiconductor

Other Datasheets by Unisonic Technologies

Part Number Description
5N120-E3 N-CHANNEL POWER MOSFET
5N100-FC N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 5N120 5A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 5N120L-T47-T 5N120G-T47-T Pin Assignment: G: Gate D: Drain S: Source Package TO-247 Pin Assignment 123 GDS Packing Tube  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-532.