5N120-E3 mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.5A
* Low Reverse Transfer Capacitance
1
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, Hig.
1
* FEATURES0
* RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.5A
* Low Reverse Transfer Capacitance
1
* Fast Switching Capa.
The UTC 5N120-E3 provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
1
* FEATURES0
* RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.5A
* Low Reverse Tra.
Image gallery
TAGS