5N120-E3 datasheet, mosfet equivalent, UTC

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Features and benefits

* RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance 1 * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, Hig.

Application

1
* FEATURES0 * RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance 1 * Fast Switching Capa.

Description

The UTC 5N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1
* FEATURES0 * RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.5A * Low Reverse Tra.

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