4N80-FCQ mosfet equivalent, 800v n-channel power mosfet.
* RDS(ON) ≤ 4.7 Ω @ VGS=10V, ID=2.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
* SYMBOL
Power MOSFET
* FEATURES
* RDS(ON) ≤ 4.7 Ω @ VGS=10V, ID=2.0A * Fast switching capability * Avalanche energy specified * Improved.
The UTC 4N80-FCQ provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES
* RDS(ON) ≤ 4.7 Ω @ VGS=10V, ID=2.0A * Fast switching capability.
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