4N50-MHD mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 2.3 Ω @ VGS=10V, ID=2.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL
Power MOSFET
* .
of switching power supplies and adaptors.
* FEATURES
* RDS(ON) ≤ 2.3 Ω @ VGS=10V, ID=2.0A * Fast switching capabilit.
The UTC 4N50-MHD is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFE.
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