3N65-MH datasheet, mosfet equivalent, UTC

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Features and benefits

* RDS(ON) ≤ 4.5 Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL Power MOSFET
* .

Application

of switching power supplies and adaptors.
* FEATURES * RDS(ON) ≤ 4.5 Ω @ VGS=10V, ID=1.0A * Fast switching capabilit.

Description

The UTC 3N65-MH is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET.

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