NPN EPITAXIAL SILICON TRANSISTOR * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) .

2SD1876

2SD1877

2SD1878

2SD1879

2SD180

2SD1800

2SD1801

2SD1802

2SD1803

2SD1803I

2SD1804

2SD1804-T

2SD1804L-T

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