2NM60-Q mosfet equivalent, n-channel mosfet.
* RDS(ON) < 3.1Ω @ VGS = 10V, ID =1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
11 TO-220F1
TO-251
1 SOT-2.
* FEATURES
* RDS(ON) < 3.1Ω @ VGS = 10V, ID =1.0A * Fast switching capability * Avalanche energy specified * Improv.
The UTC 2NM60-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used .
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