Datasheet4U Logo Datasheet4U.com

20NM50 - 500V N-CHANNEL SUPER-JUNCTION MOSFET

Description

The UTC 20NM50 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

This power MOSFET is usually used at AC-DC converters for power applications.

Features

  • S.
  • RDS(ON) ≤ 0.24 Ω @ VGS=10V, ID=10A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
20NM60 N-CHANNEL POWER MOSFET STMicroelectronics
20NM65N N-channel Power MOSFET STMicroelectronics
20N03 N-Channel MOSFET INCHANGE
20N03HL MTD20N03HL Motorola
20N03L IPD20N03L Infineon Technologies

Other Datasheets by Unisonic Technologies

Part Number Description
20NM65 N-CHANNEL POWER MOSFET
20NM70 N-CHANNEL POWER MOSFET
20NM80-Q N-CHANNEL MOSFET
20N15-HC N-CHANNEL POWER MOSFET
20N50 N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD 20NM50 20A, 500V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 20NM50 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.  FEATURES * RDS(ON) ≤ 0.24 Ω @ VGS=10V, ID=10A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 2.Drain Power MOSFET 1.Gate 3.
Published: |