1NM60-Q datasheet, mosfet equivalent, UTC

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Features and benefits

* RDS(ON) < 4.6Ω @ VGS = 10V, ID =0.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
* SYMBOL Power MOSFET T.

Application

1
* FEATURES * RDS(ON) < 4.6Ω @ VGS = 10V, ID =0.5A * Fast switching capability * Avalanche energy specified * Im.

Description

The UTC 1NM60-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used .

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