1N60P mosfet equivalent, 600v n-channel power mosfet.
* RDS(ON) =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF) * Fast switching capability * Avalanche ene.
of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* FEATURES
* RDS(ON) .
The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high s.
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