* RDS(ON) < 0.20Ω @ VGS=10V, ID=9.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
* SYMBOL Power MOSFET

The 18N20 suitable for resonant and PWM converter topologies.
* FEATURES * RDS(ON) < 0.20Ω @ VGS=10V, ID=9.0A * Fas.

These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The 18N20 suit.

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