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15N10 Datasheet Preview

15N10 Datasheet

100V (D-S) N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
15N10
14.7A, 100V (D-S) N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC 15N10 is an N-Channel enhancement MOSFET, it uses
UTC’s advanced technology to provide customers with a minimum
on-state resistance, high switching speed and low gate charge.
The UTC 15N10 is suitable for high efficiency switching DC/DC
converter, LCD display inverter and load switch.
„ FEATURES
* RDS(ON)=0.08@VGS=10V,ID=8A
* Low gate charge (Typ=24nC)
* Low CRSS (Typ=23pF)
* High switching speed
„ SYMBOL
Power MOSFET
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
15N10L-TN3-T
15N10G-TN3-T
15N10L-TN3-R
15N10G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-846.B
Free Datasheet http://www.Datasheet4U.com




UTC

15N10 Datasheet Preview

15N10 Datasheet

100V (D-S) N-CHANNEL POWER MOSFET

No Preview Available !

15N10
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
100 V
±20 V
Drain Current
Continuous
TC=25°C, TJ=150°C
TC=70°C, TJ=150°C
Pulsed
ID
IDM
14.7 A
13.6 A
59 A
Power Dissipation
TC=25°C
TC=70°C
Operating Junction Temperature
PD
34.7 W
22.2 W
TJ
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
Junction to Case (Note)
θJC
Note: The device mounted on 1in2 FR4 board with 2 oz copper.
RATINGS
3.6
UNIT
°C/W
„ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=80V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
100 V
1 µA
+100 nA
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note)
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=8A
1 3V
80 100 m
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=15V, f=1MHz
890 pF
58 pF
23 pF
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Gate-Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QG
QGS
QGD
RG
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=80V, ID=10A
VGS=4.5V, VDS=80V, ID=10A
VDS=0V, VGS=0V, f=1MHz
VDS=50V, RL=5, VGEN=10V,
RG=1
24 nC
13 nC
4.6 nC
7.6 nC
0.9
14 ns
33 ns
39 ns
5 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD IS=8A, VGS=0V
0.9 1.2
Note: Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-846.B
Free Datasheet http://www.Datasheet4U.com


Part Number 15N10
Description 100V (D-S) N-CHANNEL POWER MOSFET
Maker UTC
Total Page 5 Pages
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