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15N10 Datasheet Preview

15N10 Datasheet

100V (D-S) N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
15N10
14.7A, 100V (D-S) N-CHANNEL
POWER MOSFET
1
DESCRIPTION
The UTC 15N10 is an N-Channel enhancement MOSFET, it
uses UTCs advanced technology to provide customers with a
minimum on-state resistance, high switching speed and low gate
charge.
The UTC 15N10 is suitable for high efficiency switching DC/DC
converter, LCD display inverter and load switch.
FEATURES
* RDS(ON) 100 mΩ @ VGS=10V, ID=8.0A
RDS(ON) 110 mΩ @ VGS=4.5V, ID=8.0A
* High switching speed
SYMBOL
2.Drain
1
1
Power MOSFET
TO-220
TO-251
TO-252
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
15N10L-TA3-T
15N10G-TA3-T
15N10L-TM3-T
15N10G-TM3-T
15N10L-TN3-R
15N10G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-251
TO-252
Pin Assignment
123
GD S
GD S
GD S
Packing
Tube
Tube
Tape Reel
15N10G-TA3-T
(1)Packing Type
(1) T: Tube, R: Tape Reel
(2)Package Type
(2) TA3: TO-220, TM3: TO-251, TN3: TO-252
(3)Green Package (3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
Lot Code
UTC
15N10
1
L: Lead Free
G: Halogen Free
Date Code
www.unisonic.com.tw
Copyright © 2020 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-846.F




UTC

15N10 Datasheet Preview

15N10 Datasheet

100V (D-S) N-CHANNEL POWER MOSFET

No Preview Available !

15N10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous TC=25°C
TC=70°C
ID
14.7
13.6
A
A
Pulsed
IDM 30
A
TO-220
60 W
Power Dissipation
TC=25°C
TO-251
TO-252
PD
34.7 W
Operating Junction Temperature
TJ -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
TO-220
TO-251/TO-252
θJA
62.5
110
Junction to Case (Note)
TO-220
TO-251/TO-252
θJC
2.5
3.6 (Note)
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=80V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
100 V
1 µA
+100 nA
-100 nA
Gate Threshold Voltage
Drain-Source On-State Resistance (Note)
DYNAMIC PARAMETERS
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=8.0A
VGS=4.5V, ID=8.0A
1.0 3.0 V
100 m
110 m
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-Resistance
SWITCHING PARAMETERS
CISS
COSS
CRSS
RG
VGS=0V, VDS=15V, f=1MHz
VDS=0V, VGS=0V, f=1MHz
1411
78
65
0.81
pF
pF
pF
Total Gate Charge
QG VGS=10V, VDS=80V, ID=15A
Total Gate Charge
QG
Gate to Source Charge
QGS VGS=4.5V, VDS=80V, ID=15A
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDS=50V, VGS=10V, ID=15A,
RG=25Ω
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
34 nC
18.4 nC
5.5 nC
8 nC
13 ns
22 ns
100 ns
43 ns
Drain-Source Diode Forward Voltage
VSD IS=8A, VGS=0V
0.9 1.2 V
Note: Pulse test: pulse width 300us, duty cycle 2%, Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-846.F


Part Number 15N10
Description 100V (D-S) N-CHANNEL POWER MOSFET
Maker UTC
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15N10 Datasheet PDF





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